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In this paper, a fast switching segmented anode npn superjunction (SJ) insulated gate bipolar transistor (SA-NPN SJ IGBT) is proposed. The anode of the device consists of segments of n-col/p and p-col under the n-buffer. The n-col/p-base/n-buffer forms a narrow base npn transistor, which helps electrons to be extracted faster and reduces the turn-off loss (Eoff). It is demonstrated that the npn transistor could reduce the Eoff dramatically at any pillar doping levels. In addition, the effect of different ratio of the anode segments and doping concentration of p-base has also been investigated. Simulation results show that, under on-state voltage drop (Von) of 0.98 V, Eoff of the SA-NPN SJ IGBT is as low as 0.74 mJ/cm2, which is 45% lower than that of the conventional SJ IGBT.